1. High thermal conductivity: The thermal conductivity of silicon carbide is significantly higher than that of traditional silicon materials, which can effectively dissipate heat in high temperature environments and reduce thermal stress.
2. High breakdown voltage: The breakdown voltage of silicon carbide is 10 times that of silicon, which is suitable for high-voltage applications, reduces leakage current, and improves device reliability.
3. High hardness and wear resistance: The Mohs hardness of silicon carbide is as high as 9.5, which is an excellent wear-resistant material suitable for making wear-resistant parts.
3. Chemical stability: It has good tolerance to acid and alkali solvents and is suitable for use in harsh chemical environments.
4. Wide bandgap characteristics: It is suitable for high-frequency, high-voltage, and high-temperature working conditions, and is superior to traditional silicon-based semiconductors.